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BTS3205G smart low-side power switch hitfet data sheet, rev. 1.0, december 2007 automotive power
smart low-side power switch BTS3205G data sheet 2 rev. 1.0, 2007-12-06 1overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3.1 pin assignment BTS3205G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3.2 pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 general product characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.2 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2.1 transient thermal impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 block description and characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.1 input and power stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.1.1 input circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.1.2 failure feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.1.3 output on-state resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.1.4 power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.1.5 output timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.1.6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6.1 thermal protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6.2 overvoltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6.3 short circuit protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.4 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 7 package outlines BTS3205G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
pg-dso-8-24 type package marking BTS3205G pg-dso-8-24 BTS3205G data sheet 3 rev. 1.0, 2007-12-06 smart low-side power switch hitfet BTS3205G 1 overview features ? low input current ? compatible to standard power mosfet ? green product (rohs compliant) ?aec qualified description the BTS3205G is a one channel low-side power switch in pg-dso-8-24 package providing embedded protective functions. the device is monolithic integrated and consist of an n-channel power transistor and additional protection circuitry. table 1 product summary drain voltage v d 42 v 1) 1) active clamped input voltage v in(max) 10 v maximum on-state resistance at t j = 150 c r ds(on,hot max) 1.9 ? nominal load current i dnom(min) 350 ma drain current i d 600 ma 2) 2) internally limited single clamping energy e as 65 mj
smart low-side power switch BTS3205G overview data sheet 4 rev. 1.0, 2007-12-06 protective functions ? electrostatic discharge protection (esd) ? active clamp over voltage protection ? thermal shutdown with auto restart ? short circuit protection fault information ? thermal shutdown ? short circuit applications ? designed for relays driving in automotive applications ? all types of resistive, inductive and capacitive loads ? suitable for loads with peak currents ? replaces discrete circuits detailed description the device is able to switch all kind of resistive, inductive and capacitive loads, limited by e as and maximum current capabilities. the BTS3205G offers esd protection of the in pin in relation to the source pin. the overtemperature protection is in order to prevent the device from overheating due to overload and/or bad cooling conditions. the temperature information is given by a temperature sensor in the power mosfet. during thermal shutdown the device tries to sink an increased input current for feedback the fault condition. the BTS3205G has a thermal-auto-restart function, the device will turn on again after the measured temperature has dropped for the thermal hysteresis. the over voltage protection is active during load-dump or inductive turn off conditions. the power mosfet is turned on if the drain-source voltage gets too high. this function is available without supply.
data sheet 5 rev. 1.0, 2007-12-06 smart low-side power switch BTS3205G block diagramterms 2 block diagram figure 1 block diagram 2.1 terms figure 2 shows all external terms used in this data sheet. figure 2 terms drain source over- voltage protection in gate driving unit esd protection blockdiagram.emf over- temperature protection short circuit detection terms.emf v in v d source i s drain v bb r l in i d i in v bb gnd r in BTS3205G
smart low-side power switch BTS3205G pin configurationpin assignment BTS3205G data sheet 6 rev. 1.0, 2007-12-06 3 pin configuration 3.1 pin assignment BTS3205G figure 3 pin configuration pg-dso-8-24 3.2 pin definitions and functions pin symbol function 1 source ground connection 2 in input / fault feedback 3, 4 nc not connected 5, 6, 7, 8 drain load connection p-dso-8_1chan.vsd 1 2 n.c. 8 7 drain in 6 5 3 4 drain drain drain source n.c.
data sheet 7 rev. 1.0, 2007-12-06 smart low-side power switch BTS3205G general product characteristicsabsolute maximum ratings 4 general product characteristics 4.1 absolute maximum ratings absolute maximum ratings 1) t j = -40 c to +150 c; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) 1) not subject to production test, specified by design. pos. parameter symbol limit values unit test conditions min. max. voltages 4.1.1 drain voltage v d ?42v 2) v in = 0 v, i d = 10 ma 2) active clamped. 4.1.2 input voltage v in -0.2 10 v ? 4.1.3 input current i in self limited ma -0.2 v < v in < 10 v 4.1.4 -2 2 ma v in < -0.2 v or v in > 10 v 4.1.5 drain current i d ?600ma 3) t j = 25 c 3) internally limited. energies 4.1.6 unclamped single pulse inductive energy single pulse e as 065mj i d = 350 ma; v bb = 28 v; t j(start) = 85 c 4.1.7 unclamped single pulse inductive energy single pulse ?30mj i d = 250 ma; v bb = 28 v; t j(start) = 150 c 4.1.8 unclamped repetitive pulse inductive energy 1 10 4 cycles e ar 018mj i d = 200 ma; v bb = 13.5 v; t j(start) = 150 c 4.1.9 unclamped repetitive pulse inductive energy 1 10 6 cycles ?13mj i d = 170 ma; v bb = 13.5 v; t j(start) = 150 c 4.1.10 total power dissipation p tot ?0.78w 4) t a = 85 c 4) device mounted on pcb according eia/jedec standard jesd51-7 (4-layer fr4, 76.2 mm 114.3 mm with buried planes). pcb is mounted vertical without blown air. temperatures 4.1.11 operating temperature t j -40 +150 c? 4.1.12 storage temperature t stg -55 +150 c? esd susceptibility 4.1.13 electrostatic discharge voltage 5) 5) esd susceptibility hbm according to eia/jesd 22-a 114b, section 4. v esd -2 2 kv in pin r = 1.5 k ; c = 100 pf; t j = 25 c
smart low-side power switch BTS3205G general product characteristicsthermal resistance data sheet 8 rev. 1.0, 2007-12-06 4.2 thermal resistance note: stresses above the ones listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. note: integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. protection functions are not designed for continuous repetitive operation. 4.2.1 transient thermal impedance figure 4 typical transient thermal impedance single pulse, z thja and z thjc pos. parameter symbol limit values unit conditions min. typ. max. 4.2.1 junction to soldering point r thjc ??44k/w 1) 2) 1) not subject to production test, specified by design. 2) device mounted on pcb according eia/jedec standard jesd51-7 (4-layer fr4, 76.2 mm 114.3 mm with buried planes). pcb is mounted vertical without blown air with 0.78w power dissipation generated on the dmos. 4.2.2 junction to ambient r thja ?90?k/w 1) 2) zth_3205 .emf 10 1 1 10 -1 10 -2 10 2 10 3 10 -3 10 -4 10 -5 15 0 30 45 60 75 90 zth [ k / w ] t p [ s ] z thjc z thja
data sheet 9 rev. 1.0, 2007-12-06 smart low-side power switch BTS3205G general product characteristicsthermal resistance figure 5 typical transient thermal impedance z thja with different duty cycles z thja = f(t p ) , d = tp/t, t a = 25 c device mounted on pcb according eia/jedec standard jesd51-7 (4-layer fr4, 76.2 mm 114.3 mm with buried planes). pcb is mounted vertical without blown air with 0.78w power dissipation generated for single pulse on the dmos z thja [k/w] 10 -3 10 -2 10 -1 10 -1 10 -6 10 -5 10 -4 t p [s] 10 2 110 1 10 3 10 2 10 1 1 d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse pulse_bts3205_24 .emf
smart low-side power switch BTS3205G block description and characteristicsinput and power stage data sheet 10 rev. 1.0, 2007-12-06 5 block description and characteristics 5.1 input and power stage 5.1.1 input circuit figure 6 shows the input circuit of the BTS3205G. the zener diode protects the input circuit against esd pulses. the internal circuitry is supplied by the input pin. during normal operation the input is connected to the gate of the power mosfet. during fault condition the device tries to sink the current i inlim in order to give the fault information back to the driving circuit. figure 6 input circuit figure 7 typical input threshold voltage v inth = f( t j ); i d = 50 a, v d = v in figure 8 typical transfer characteristic i d = f( v in ); v d = 12 v, t jstart = 25 c input.em f source z d in i in gate faul t condition i inlim i innom logic 0,00 0,25 0,50 0,75 1,00 1,25 1,50 1,75 2,00 -50 -25 0 25 50 75 100 125 150 v in(th) [ v ] t [c] vinth.emf 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 012345 i d [ a ] v in [ v ] transferchar.emf
data sheet 11 rev. 1.0, 2007-12-06 smart low-side power switch BTS3205G block description and characteristicsinput and power stage 5.1.2 failure feedback during failure condition the BTS3205G tries to sink a increased input current i inlim . 5.1.3 output on-state resistance the on-state resistance depends on the junction temperature t j . figure 9 shows this dependancy for the typical on-state resistance r ds(on) . figure 9 typical on-state resistance, r ds(on) = f( t j ) 5.1.4 power dissipation the maximum allowed power dissipation in figure 10 is calculated by r thjc and r thja . figure 10 maximal allowable power dissipation 0,3 0,5 0,7 0,9 1,1 1,3 1,5 -50 -25 0 25 50 75 100 125 150 r ds(on) [ ? ] t [ c ] rdson.emf vin = 5v vin = 10v 0,01 0,10 1,00 -50 -25 0 25 50 75 100 125 150 t / c p tot / w r thja =90 k/w r thjc =44 k/w
smart low-side power switch BTS3205G block description and characteristicsinput and power stage data sheet 12 rev. 1.0, 2007-12-06 5.1.5 output timing a voltage signal at the input pin above the threshold voltage causes the power mosfet to switch on with a dedicated slope which is optimized for low emc emission. figure 11 shows the timing definition. figure 11 definition of power output timing for resistive load 5.1.6 characteristics note: characteristics show the deviation of parameter at given input voltage and junction temperature. typical values show the typical parameters expected from manufacturing. all voltages with respect to source pin unless otherwise stated. electrical characteristics: input and power stage t j = -40 c to +150 c , all voltages with respect to ground, positive current flowing into pin (unless otherwise specified pos. parameter symbol limit values unit test conditions min. typ. max. input 5.1.1 nominal input current i innom ?1030 a v d = 0 v; v in = 10 v 5.1.2 input current protection mode i inlim ? 100 150 a v in = 10 v; t j = 150 c 5.1.3 input threshold voltage v inth 1.3 1.7 2.2 v v d = v in ; i d = 50 a t j = 25 c 5.1.4 0.8 ? ? v v d = v in ; i d = 50 a, 150 c in [v] 0 5.0 t v d v bb switching.em f t 10 % 90 % t on t ond t off t o ffd
data sheet 13 rev. 1.0, 2007-12-06 smart low-side power switch BTS3205G block description and characteristicsinput and power stage power stage 5.1.5 on-state resistance r ds(on) ?0.9? ? 1) t j = 25 c; v in = 5 v; i d = 200ma 5.1.6 ? 1.8 2.4 ? t j = 150 c; v in = 5 v; i d = 200ma 5.1.7 ? 0.7 ? ? 1) t j = 25 c; v in = 10 v; i d = 200ma 5.1.8 ? 1.4 1.9 ? t j = 150 c; v in = 10 v; i d = 200ma 5.1.9 nominal load current i dnom 350 520 ? ma 1) t j < 150 c; t a = 105 c 2) ; v in = 5 v 5.1.10 zero input voltage drain current i dss ??5 a v ds = 13.5 v; v in = 0 v; t j =150 c ?2.56 a v ds = 32 v; v in = 0 v; t j =-40 c to 85 c ?47 a v ds = 32 v; v in = 0 v; t j =150 c electrical characteristics: input and power stage (cont?d) t j = -40 c to +150 c , all voltages with respect to ground, positive current flowing into pin (unless otherwise specified pos. parameter symbol limit values unit test conditions min. typ. max.
smart low-side power switch BTS3205G block description and characteristicsinput and power stage data sheet 14 rev. 1.0, 2007-12-06 switching v bb = 12 v, r l = 82 ? 5.1.11 turn-on time t on ?1638 s v in = 10 v to 90% i d 5.1.12 turn-off time t off ?1545 s v in = 0 v to 10% i d 5.1.13 slew rate on d v ds /d t on ?2.59.3v/ s 50% - 30% v bb ; r l = 82 ? ; v in = 0 v to 10 v; v bb = 12 v 5.1.14 slew rate off d v ds /d t off ? 6.0 18.2 v/ s 30% - 50% v bb ; r l = 82 ? ; v in = 10 v to 0 v; v bb = 12 v inverse diode 5.1.15 inverse diode forward voltage v d ?-1.0-1.5v i d = -1 a; v in = 0 v 1) not subject to production test, calculated by r thja and r ds(on) . 2) device mounted on pcb according eia/jedec standard jesd51-7 (4-layer fr4, 76.2 mm 114.3 mm with buried planes). pcb is mounted vertical without blown air. electrical characteristics: input and power stage (cont?d) t j = -40 c to +150 c , all voltages with respect to ground, positive current flowing into pin (unless otherwise specified pos. parameter symbol limit values unit test conditions min. typ. max.
data sheet 15 rev. 1.0, 2007-12-06 smart low-side power switch BTS3205G protection functionsthermal protection 6 protection functions the device provides embedded protection functions. integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operation. 6.1 thermal protection the device is protected against over temperature due to overload and / or bad cooling conditions. to ensure this a temperature sensor located in the power mosfet is used. the BTS3205G has a thermal auto-restart function. after the device has cooled down it will switch on again see figure 12 . figure 12 error signal via input current at thermal shutdown 6.2 overvoltage protection when switching off inductive loads with low-side switches, the drain-source voltage v d rises above battery potential, because the inductance intends to continue driving the current. figure 13 output clamp the BTS3205G is equipped with a voltage clamp mechanism that keeps the drain-source voltage v d at a certain level. see figure 13 and figure 14 for more details. in 0 5v t thermal shutdown t t j t jsd i in i is t 0 i inf ? t jsd thermal_fault_autorestart.emf restart sour ce drain outputclamap.emf
smart low-side power switch BTS3205G protection functionsovervoltage protection data sheet 16 rev. 1.0, 2007-12-06 figure 14 switching an inductance while demagnetization of inductive loads, energy has to be dissipated in the BTS3205G. this energy can be calculated with following equation: (1) following equation simplifies under assumption of r l = 0 (2) in 0 5v t t v d v bb inductiveload.em f t i d v clamp turn off due to over temperature or short circuit ev bb v out cl () + () v out cl () r l ------------------------ 1 r l i l ? v out cl () ------------------------ + ?? ?? ?? i l + ln ? l r l ------ ?? = e 1 2 -- - li l 2 1 v bb v out cl () v bb ? ------------------------------------- - + ?? ?? ?? ? =
data sheet 17 rev. 1.0, 2007-12-06 smart low-side power switch BTS3205G protection functionsshort circuit protection 6.3 short circuit protection the condition short circuit is an overload condition of the device. if the current reaches the value of i lim the device starts to limit the current. in the condition of current limitation the device heats up. if the thermal shutdown temperature is reached the device turns off. figure 15 shows this behavior. during the current limitation the input current is above i innom . during the time period t dlim , the current can be above i lim . figure 15 short circuit behavior of BTS3205G as the device is a low side switch it can be assumed that the source to ground path has a neglectable low impedance and resistance. therefore all impedance and resistance in the load path during short circuit is merged into zsc. in 0 5v t t j t jsd i in i innom 0 i i n lim short_circuit.em f turn off due to over temperature i d i lim restart after short circuit turn off restar t into norm al load condition v bb /z sc ? t jsd t t t occurrence of over current or high ohmic short cir cuit t d lim
smart low-side power switch BTS3205G protection functionscharacteristics data sheet 18 rev. 1.0, 2007-12-06 6.4 characteristics note: characteristics show the deviation of parameter at given input voltage and junction temperature. typical values show the typical parameters expected from manufacturing. electrical characteristics: protection functions t j = -40 c to +150 c; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit test conditions min. typ. max. thermal protection 6.4.1 thermal shut down junction temperature t jsd 150 175 1) 1) not subject to production test, specified by design. ? c? 6.4.2 thermal hysteresis ? t jsd ?10?k 1) overvoltage protection 6.4.3 drain clamp voltage v clamp 42 ? 55 v v in = 0 v; i d = 10 ma; current limitation and s hort circuit protection 6.4.4 current limitation i lim 0.6 0.9 1.2 a v in = 10 v; v ds = 12 v; t measure = 4 t dlim t j = 25 c 1) 0.3 ? ? t j = 150 c ??1.4 t j = -40 c 1) 6.4.5 current limitation delay time t dlim ??50 s 1)
data sheet 19 rev. 1.0, 2007-12-06 smart low-side power switch BTS3205G package outlines BTS3205G 7 package outlines BTS3205G figure 16 pg-dso-8-24 (plastic dual small outline package) green product (rohs compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb-free finish on leads and suitable for pb-free soldering according to ipc/jedec j-std-020). +0.06 0.19 0.35 x 45? 1) -0.2 4 c 8 max. 0.64 ?.2 6 ?.25 0.2 8x m c 1.27 +0.1 0.41 0.2 m a -0.06 1.75 max. (1.45) ?.07 0.175 b 8x b 2) index marking 5 -0.2 1) 4 1 85 a 1) does not include plastic or metal protrusion of 0.15 max. per side 2) lead width can be 0.61 max. in dambar area gps01181 0.1 for further information on alternative packages, please visit our website: http://www.infineon.com/packages . dimensions in mm
smart low-side power switch BTS3205G revision history data sheet 20 rev. 1.0, 2007-12-06 8 revision history version date changes rev. 1.0 2007-12-06 released data sheet
edition 2007-12-06 published by infineon technologies ag 81726 munich, germany ? 12/11/07 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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